Hall sensor technology is not new - in fact, the Hall Effect was first discovered by Dr. Edwin Hall in 1879. To-date, Hall sensors are used in a wide variety of everyday applications such as proximity switching, positioning, speed detection and current sensing.

What makes MASTInc’s HCS unique is the ability to provide very high magnetic sensitivity while at the same time increasing device density, reducing cost and simplifying manufacturing complexity. MASTInc’s ultra-sensitive Hall Cross Sensor (HCS) implementation comes as a result of over 7 years research and development in Magnetic Random Access Memory (MRAM).

MASTInc’s HCS design features a Gallium Arsenide (GaAs) substrate that optimizes sensitivity with cost and overall device size. Patented and patent-pending design features further enhance the sensitivity while reducing error due to magnetic interference and noise.

The table below shows the relative sensitivity of some Hall Effect sensor substrates. As indicated, GaAs provides a much higher Electron Mobility (sensitivity) than Silicon and is more resistant to temperature drift due to a higher Energy Band Gap. There are materials that provide greater electron mobility than GaAs but they either exhibit unwanted characteristics (such as temperature drift) or are prohibitively expensive.

In addition to the enhanced sensitivity and stability of a GaAs substrate, certain MASTInc HCS designs provide other advantages, including:

  • A patent-pending field concentrator design that increases sensitivity and reduces errors.
  • An active element design that allows for self-calibration at the substrate level, reducing inaccuracies due to magnetic “noise”.

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